PIC16F636-I/STVAOマイクロチップ
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PIC16F636-I/STVAO microchip
• Precision Internal Oscillator: - Factory calibrated to ±1%, typical - Software selectable frequency range of 8 MHz to 125 kHz - Software tunable - Two-Speed Start-up mode - Crystal fail detect for critical applications - Clock mode switching during operation for power savings • Clock mode switching for low-power operation • Power-Saving Sleep mode • Wide operating voltage range (2.0V-5.5V) • Industrial and Extended Temperature range • Power-on Reset (POR) • Wake-up Reset (WUR) • Independent weak pull-up/pull-down resistors • Programmable Low-Voltage Detect (PLVD) • Power-up Timer (PWRT) and Oscillator Start-up Timer (OST) • Brown-out Reset (BOR) with software control option • Enhanced Low-Current Watchdog Timer (WDT) with on-chip oscillator (software selectable nominal 268 seconds with full prescaler) with software enable • Multiplexed Master Clear with pull-up/input pin • Programmable code protection (program and data independent) • High-Endurance Flash/EEPROM cell: - 100,000 write Flash endurance - 1,000,000 write EEPROM endurance - Flash/Data EEPROM Retention: > 40 years
• Precision Internal Oscillator: - Factory calibrated to ±1%, typical - Software selectable frequency range of 8 MHz to 125 kHz - Software tunable - Two-Speed Start-up mode - Crystal fail detect for critical applications - Clock mode switching during operation for power savings • Clock mode switching for low-power operation • Power-Saving Sleep mode • Wide operating voltage range (2.0V-5.5V) • Industrial and Extended Temperature range • Power-on Reset (POR) • Wake-up Reset (WUR) • Independent weak pull-up/pull-down resistors • Programmable Low-Voltage Detect (PLVD) • Power-up Timer (PWRT) and Oscillator Start-up Timer (OST) • Brown-out Reset (BOR) with software control option • Enhanced Low-Current Watchdog Timer (WDT) with on-chip oscillator (software selectable nominal 268 seconds with full prescaler) with software enable • Multiplexed Master Clear with pull-up/input pin • Programmable code protection (program and data independent) • High-Endurance Flash/EEPROM cell: - 100,000 write Flash endurance - 1,000,000 write EEPROM endurance - Flash/Data EEPROM Retention: > 40 years
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